GA100TS120U |
RFQ for GA100TS120U |
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| Product | Manufacturers | Pack | D/C |
| GA100TS120U | - | MODULE | - |
Features |
| • UltraFast: Optimized for high operatingn frequencies 8-40 kHz in har switching, >200 kHz in resonant mode• Very low conduction and switching losses• HEXFRED™ antiparallel diodes with ultra- soft recovery• Industry standard package• UL approved• Generation 4 IGBT technology |
|
Parameter |
Max. |
Units | |
|
VCES |
Collector-to-Emitter Voltage |
1200 |
V |
|
IC @ TC = 25 |
Continuous Collector Current |
100 |
A |
|
ICM |
Pulsed Collector Current➀ |
200 | |
|
ILM |
Peak Switching Current ➁ |
200 | |
|
IFM |
Peak Diode Forward Current |
200 | |
|
VGE |
Gate-to-Emitter Voltage |
± 20 |
V |
| VISOL | RMS Isolation Voltage, Any Terminal To Case, t = 1 min |
2500 | |
|
PD @ TC = 25 |
Maximum Power Dissipation |
520 |
W |
|
PD @ TC = 85 |
Maximum Power Dissipation |
270 | |
|
TJ |
Operating Junction Temperature Range |
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